STV5111 데이터 시트보기 (PDF) - STMicroelectronics
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STV5111 Datasheet PDF : 7 Pages
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STV5111
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
VCC
IOD
IOG
IFD
IFG
Ij
Tj
Toper
Tstg
Parameter
Supply High Voltage
Supply Low Voltage
Output Current
to VDD
to Ground
Output Current < 50µs duration
to VDD
to Ground
Input Current
Junction Temperature
Operating Ambient Temperature
Storage Temperature
Pin 5
Pin 2
Pins 7 - 10 - 13
Pins 9 - 12 - 15
Pins 1 - 3 - 4
Value
Unit
250
V
20
V
Protected
8
mA
45
mA
45
mA
60
mA
150
°C
0, + 70
°C
- 20, + 150
°C
THERMAL DATA
Symbol
Rth(j-c)
Rth(j-a)
Parameter+
Junction-Case Thermal Resistance
Junction-Ambient Thermal Resistance
Max.
Typ.
Value
3
35
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (VCC = 12V ; VDD = 210V ; Tamb = 25oC ; AV = 55 unless otherwise specified)
Symbol
VDD
VCC
IDD
ICC
Vsath
RON
BW
tR, tF
GO
P
VREF
IIB
RI
ESD
Parameter
Test Conditions
Min. Typ. Max. Unit
High Supply Voltage (Pin5)
200 210 V
Low Supply Voltage (Pin 2)
7.5 9 10 V
High Voltage Supply Internal DC Current
VOUT = 100V
(without current due to the feedback network)
9.5 15 mA
Low Voltage Supply Internal DC Current
38 55 mA
Output Saturation Voltage (High level)
(Pins7-10-13)
IO = - 10µA
5
V
Output Mos Transistor (Low level)
(Pins7-10-13)
1.7
kΩ
Bandwidth at - 3dB
Rise & Fall Time
Open Loop Gain
Measured on CRT cathodes.
(CLOAD = 10pF, RPROTECT = 1kΩ
6
VOUT = 100V, D VOUT = 100VPP)
Measured between 10% & 90% of
output pulse
(CLOAD = 10pF, RPROTECT = 1kΩ
60
VOUT = 100V, D VOUT = 100VPP
47 50
MHz
ns
dB
Open Loop Gain Difference between
2channels
Open Loop Gain Temperature Coefficient
-1.5 0
0
1.5 dB
dB/oC
Internal Power Dissipation
(seecalculationbelow)
Internal Voltage Reference (Pins 1-3-4)
Voltage Reference Temperature Coefficient
VOUT = 2MHz, 70VPP sine wave,
VBLACK = 170V, CL = 20pF
RF = 68kΩ
VOUT = 100V
3.6
dB/°C
2.3 2.5 2.7 V
0
mV/°C
Input Bias Current (Pins 1-3-4)
Input Resistance
VOUT = 100V
75
µA
4
kΩ
ESD Human Body Model
1.2
kV
4/7
1
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