SUF620EF 데이터 시트보기 (PDF) - AUK -> KODENSHI CORP

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SUF620EF

P-Channel Enhancement-Mode MOSFET

AUK -> KODENSHI CORP 

SUF620EF

Absolute maximum ratings

Characteristic

Drain-Source voltage

Gate-Source voltage

DC Drain current

Drain Power dissipation

Channel temperature

Storage temperature range

(Q1,Q2 Common)

Symbol

VDS

VGSS

ID

PD

Tch

Tstg

Ratings

-20

±7

-50

100

150

-55~150

(Ta=25°C)

Unit

V

V

mA

mW

°C

°C

Electrical Characteristics

Characteristic

Drian-Source breakdown voltage

Gate-Threshold voltage

Drain cut-off current

Gate leakage current

Drain-Source on-resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse Transfer capacitance

Turn-on time

Turn-off time

(Q1,Q2 Common)

Symbol

Test Condition

BVDSS ID=-100µA, VGS=0

Vth

ID=-0.1mA, VDS=-3V

IDSS

IGSS

VDS=-20V, VGS=0

VGS=±7V, VDS=0

RDS(ON)

｜Yfs｜

VGS=-2.5V, ID=-10mA

VDS=-3V, ID=-10mA

Ciss

VDS=-3V, VGS=0, f=1MHz

Coss

VDS=-3V, VGS=0, f=1MHz

Crss

VDS=-3V, VGS=0, f=1MHz

tON

VDD=-3V, ID=-10mA

VGEN=0~-2.5V

tOFF

VDD=-3V, ID=-10mA

VGEN=0~-2.5V

(Ta=25°C)

Min. Typ. Max. Unit

-20

V

-0.5

-1.5

V

-1

µA

±1

µA

40

Ω

15

mS

10.4

pF

8.4

pF

2.8

pF

0.15

㎲

0.13

㎲

*. Switching Time Test Circuit

=

Ω

KST-J016-000

2

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