SUM60N06-15 데이터 시트보기 (PDF) - Vishay Semiconductors
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SUM60N06-15 Datasheet PDF : 8 Pages
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SUM60N06-15
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60
0.015 at VGS = 10 V
ID (A)
60a
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
APPLICATIONS
• Industrial
Available
RoHS*
COMPLIANT
D
TO-263
G
G DS
Top View
Ordering Information: SUM60N06-15
SUM60N06-15-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current
TC = 25 °C
TC = 125 °C
ID
60
35
A
IDM
100
Avalanche Current
IAR
35
Repetitive Avalanche Energya
L = 0.1 mH
EAR
61
mJ
Maximum Power Dissipationa
TC = 25 °C
100b
TA = 25 °Cc
PD
3.75
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mountc
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72080
S-80273-Rev. C, 11-Feb-08
Symbol
RthJA
RthJC
Limit
40
1.4
Unit
°C/W
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