SVD2N60T 데이터 시트보기 (PDF) - Silan Microelectronics
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SVD2N60T Datasheet PDF : 6 Pages
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SVD2N60T
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RșJC
RșJA
Value
2.87
100
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=1.0A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=2.0A,
RG=25Ω
(Note 2,3)
VDS=480V,ID=2.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
Unit
V
µA
nA
V
--
4.0 4.6 Ω
-- 320 380
--
30 45 pF
--
3
5.6
--
13 30
--
12 60
ns
--
73 100
-- 14.3 70
--
9.3 13
--
2.0
--
nC
--
3.3
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current
IS
Integral Reverse P-N
Pulsed Source Current
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD IS=2.0A,VGS=0V
Reverse Recovery Time
Trr
IS=2.0A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µS
Notes:
1. L=56mH, IAS=2.0A,VDD=50V,RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width 300ȝs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
Typ.
--
--
Max
.
2
8.0
Unit
A
--
-- 1.4 V
--
230 --
ns
--
1.0 --
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 2 of 6
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