TF821M 데이터 시트보기 (PDF) - Sanken Electric co.,ltd.
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TF821M Datasheet PDF : 2 Pages
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TO-220 8A Thyristor
TF821M, TF841M, TF861M
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V
qAverage on-state current: IT(AV)=8A
qGate trigger current: IGT=15mA max
External Dimensions
(Unit: mm)
10.4max
5.0max
2.1max
φ 3.75±0.1
a
b
1.35±0.15
2.5±0.1
2.5±0.1
0.65 +–00..12
1.7±0.2
(1) (2) (3)
(1). Cathode (K)
a. Part Number
(2). Anode (A)
b. Lot Number
(3). Gate (G)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
VDRM
VRRM
VDSM
VRSM
IT(AV )
IT(RMS)
ITSM
IFGM
VFGM
VRGM
PGM
PG (AV)
Tj
Tstg
Ratings
TF821M TF841M TF861M
200
400
600
200
400
600
300
500
700
300
500
700
8.0
12.6
120
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
Conditions
Tj= – 40 to +125°C, RGK =1kΩ
50Hz Half-cycle sinewave, Continuous current, Tc=83°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
sElectrical Characteristics
Parameter
Symbol
min
Off-state current
IDRM
Reverse current
IRRM
On-state voltage
VTM
Gate trigger voltage
VGT
Gate trigger current
IGT
Gate non-trigger voltage
VGD
0.1
Holding current
IH
Critical rate-of-rise of off-state voltage dv/dt
Turn-off time
tq
Thermal resistance
Rth
Ratings
typ
5.0
4.0
50
30
max
2.0
2.0
1.4
1.5
15
2.7
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/ W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ
TC=25°C, ITM=15A
VD=6V, RL=10Ω, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ
RGK=1kΩ, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF
Tc = 25°C
Junction to case
14
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