TISP4350L3BJR 데이터 시트보기 (PDF) - Power Innovations Ltd
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TISP4350L3BJR Datasheet PDF : 14 Pages
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TISP4070L3BJ, TISP4350L3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1999 — REVISED NOVEMBER 1999
electrical characteristics for the T and R terminals, TA = 25 °C (unless otherwise noted)
IDRM
PARAMETER
Repetitive peak off-
state current
V(BO) Breakover voltage
Impulse breakover
V(BO) voltage
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Coff Off-state capacitance
VD = VDRM
TEST CONDITIONS
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
f = 100 kHz,
f = 100 kHz,
Vd = 1 V rms,
Vd = 1 V rms,
VD = 0
VD = 1 V
VD = 5 V
VD = 0
VD = 1 V
VD = 5 V
MIN
TA = 25 °C
TA = 85 °C
‘4070
‘4350
‘4070
‘4350
±40
±120
±5
TA = 85 °C
‘4070
‘4350
TYP
40
38
31
26
24
20
MAX
±5
±10
±70
±350
±78
±359
±250
±3
±350
±10
50
48
39
33
30
25
UNIT
µA
V
V
mA
V
mA
kV/µs
µA
pF
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 5)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
MIN TYP MAX UNIT
115
°C/W
52
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PRODUCT INFORMATION
3
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