UL62H256ASK35 데이터 시트보기 (PDF) - Zentrum Mikroelektronik Dresden AG

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UL62H256ASK35

Low Voltage Automotive Fast 32K x 8 SRAM

Zentrum Mikroelektronik Dresden AG 

UL62H256A

Data Retention Mode

E - controlled

VCC

3.0 V

VCC(DR) ≥ 2 V

2.2 V

tsu(DR)

Data Retention

trec

0V

2.2 V

E

VCC(DR) - 0.2 V ≤ VE(DR) ≤ VCC(DR) + 0.3 V

Data Retention

Characteristics

Data Retention Supply Voltage

Data Retention Supply Current

Data Retention Setup Time

Operating Recovery Time

Symbol

Alt.

IEC

Conditions

VCC(DR)

ICC(DR)

VCC(DR) = 2V

VE

= VCC(DR) - 0.2 V

K-Type

A-Type

tCDR

tR

tsu(DR)

trec

See Data Retention

Waveforms (above)

Min.

2

0

tcR

Typ. Max.

5

20

Unit

V

µA

µA

ns

ns

Test Configuration for Functional Check

A0

VCC

A1

A2

A3

A4

DQ0

A5

DQ1

VIH

A6

A7

DQ2

A8

DQ3

A9

DQ4

VIL

A10

DQ5

A11

A12

DQ6

A13

DQ7

A14

E

W

G

VSS

3.0 V

1076

VO

30 pF e

1260

e In measurement of tdis(E),tdis(W), ten(E), ten(W), ten(G) the capacitance is 5 pF.

6

May 07, 2004

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