VN5E050AJ-E(2008) 데이터 시트보기 (PDF) - STMicroelectronics

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VN5E050AJ-E
(Rev.:2008)

Single channel high side driver with analog current sense for automotive applications

STMicroelectronics 

VN5E050AJ-E

Electrical specifications

2.3

Electrical characteristics

Values specified in this section are for 8V <VCC< 28V; -40°C< Tj <150°C, unless otherwise

stated.

Table 5. Power section

Symbol

Parameter

Test conditions

VCC

Operating supply

voltage

VUSD Undervoltage shutdown

Undervoltage

VUSDhyst shutdown hysteresis

RON

Vclamp

IS

IL(off1)

VF

On state resistance

Clamp voltage

Supply current

Off state output current

Output - VCC diode

voltage

IOUT= 2 A; Tj= 25°C

IOUT= 2 A; Tj= 150°C

IOUT= 2 A; VCC= 5V; Tj= 25°C

IS= 20 mA

Off state; VCC=13V; Tj=25°C;

VIN=VOUT=VSENSE=VCSD=0V

On State; VCC=13V; VIN=5V;

IOUT=0A

VIN=VOUT=0V; VCC=13V; Tj=25°C

VIN=VOUT=0V; VCC=13V; Tj=125°C

-IOUT= 2A; Tj= 150°C

1. PowerMOS leakage included.

Min. Typ. Max. Unit

4.5 13 28 V

3.5 4.5 V

0.5

V

50 mΩ

100 mΩ

65 mΩ

41 46 52 V

2(1) 5(1) µA

1.5 3 mA

0 0.01 3

µA

0

5

0.7 V

Table 6. Switching (VCC= 13V; Tj= 25°C)

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

td(off)

Turn- On delay time

Turn- Off delay time

RL= 6.5Ω (see Figure 6.)

RL= 6.5Ω (see Figure 6.)

(dVOUT/dt)on Turn- On voltage slope RL= 6.5Ω

(dVOUT/dt)off Turn- Off voltage slope RL= 6.5Ω

WON

WOFF

Switching energy

losses during ton

Switching energy

losses during toff

RL= 6.5Ω (see Figure 6.)

RL= 6.5Ω (see Figure 6.)

20

40

See

Figure 26.

See

Figure 28.

0.20

0.3

µs

µs

V/ µs

V/ µs

mJ

mJ

9/37

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