VP0808M 데이터 시트보기 (PDF) - Unspecified
부품명
상세내역
제조사
VP0808M Datasheet PDF : 4 Pages
| |||
VP0808B/L/M, VP1008B/L/M
Specificationsa
Parameter
Symbol
Test Conditions
Limits
VP0808B/L/M VP1008B/L/M
Typb Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentc
Drain-Source On-Resistancec
Forward Transconductancec
Common Source
Output Conductancec
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = –10 mA
VDS = VGS, ID = –1 mA
–110 –80
–100
V
–3.4 –2 –4.5 –2 –4.5
VDS = 0 V, VGS = "20 V
TJ = 125_C
"100
"500
"100
nA
"500
VDS = –80 V, VGS = 0 V
–10
TJ = 125_C
VDS = –100 V, VGS = 0 V
–500
mA
–10
TJ = 125_C
–500
VDS = –15 V, VGS = –10 V
–2 –1.1
–1.1
A
VGS = –10 V, ID = –1 A
2.5
5
TJ = 125_C 4.4
8
5
W
8
VDS = –10 V, ID = –0.5 A
325 200
200
mS
VDS = –7.5 V, ID = –0.1 A
0.45
Dynamic
Input Capacitance
Ciss
75
150
150
Output Capacitance
Coss
VDS = –25 V, VGS = 0 V
f = 1 MHz
40
60
60 pF
Reverse Transfer Capacitance
Crss
18
25
25
Switchingd
Turn-On Time
Turn-Off Time
td(on)
11
15
15
tr
VDD = –25 V, RL = 47 W
30
ID ^ –0.5 A, VGEN = -10 V
40
40
ns
td(off)
RG = 25 W
20
30
30
tf
20
30
30
Notes
a. TA = 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
VPDV10
2
Siliconix
P-37655—Rev. B, 25-Jul-94
Share Link: 