WFF4N60 데이터 시트보기 (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF4N60 Datasheet PDF : 7 Pages
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Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 16nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage(VISO=4000V AC)
� Maximum Junction Temperature Range(150℃)
WFF4N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
4*
2.5*
16*
±30
240
10
4.5
33
0.26
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Value
Units
Min Typ Max
-
-
3.79
℃/W
-
-
62.5
℃/W
Rev.A Sep.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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