WFF4N60 데이터 시트보기 (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF4N60 Datasheet PDF : 7 Pages
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WFF4N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
VDS=600V,VGS=0V
IDSS
VDS=480V,Tc=125℃
-
-
10
µA
-
100 µA
Drain -source breakdown voltage
V(BR)DSS ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=3.25A
-
1.8
2.5
Ω
Input capacitance
Ciss
VDS=25V,
-
545
670
Reverse transfer capacitance
Output capacitance
Crss
VGS=0V,
Coss
f=1MHz
-
7
10
pF
-
70
90
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr
VDD=300V,
-
ton
ID=4.4A，
-
tf
RG=25Ω，
-
toff
(Note4,5) -
10
30
35
80
ns
45
100
20
50
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
VDD=480V,
Qg
-
VGS=10V,
Qgs
ID=4.4A
-
Qgd
(Note4,5) -
16
20
nC
3.4
-
7
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
4
A
Pulse drain reverse current
IDRP
-
-
-
17.6
A
Forward voltage(diode)
VDSF
IDR=4.4A,VGS=0V
-
-
1.4
V
Reverse recovery time
Reverse recovery charge
trr
IDR=4.4A,VGS=0V,
Qrr
dIDR / dt =100 A / µs
-
390
-
ns
-
2.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=4.4A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤4A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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