MMZ09312BT1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MMZ09312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 900 MHz, TA = 25°C, 50 ohm system, in Freescale CW

Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Unit

Small--Signal Gain (S21)

Input Return Loss (S11)

Gp

29

31.7

—

dB

IRL

—

--15

—

dB

Output Return Loss (S22)

ORL

—

--18

—

dB

Power Output @ 1dB Compression

P1dB

—

29.6

—

dBm

Third Order Output Intercept Point, Two--Tone CW

OIP3

—

42

—

dBm

Noise Figure

Supply Current (1)

Supply Voltage (1)

Table 5. ESD Protection Characteristics

NF

—

4

—

dB

ICQ

69

74

83

mA

VCC

—

5

—

V

Test Methodology

Class

Human Body Model (per JESD22--A114)

Meets 2000 V for all pins except:

Pin 11 meets 400 V

Pin 8 meets 200 V

Class 0 Rating

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

IV

Table 6. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

1

1. For reliable operation, the junction temperature should not exceed 150°C.

260

°C

VBA1

VBIAS

RFin

VBA2 VCC1

GND

BIAS

CIRCUIT

GND

GND PDET

Figure 1. Functional Block Diagram

VCC2

RFout

RFout

VBA2 VCC1 GND

12 11 10

VBA1 1

VBIAS 2

RFin 3

9 VCC2

8 RFout

7 RFout

456

GND GND PDET

Figure 2. Pin Connections

MMZ09312BT1

2

RF Device Data

Freescale Semiconductor, Inc.

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