MMZ09312BT1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MMZ09312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

TYPICAL CHARACTERISTICS — 900 MHz, 3.3 VOLT OPERATION

0

--4

--8

--12

--16

--20

85°C

--40°C

--24

VCC1 = VCC2 = VBIAS = 3.3 Vdc

--28

25°C

700

760

820

880

940

1000

f, FREQUENCY (MHz)

Figure 14. S11 versus Frequency versus

Temperature

38

34

--40°C

30

85°C

25°C

26

22

18

14

VCC1 = VCC2 = VBIAS = 3.3 Vdc

10

700

760

820

880

940

1000

f, FREQUENCY (MHz)

Figure 15. S21 versus Frequency versus

Temperature

0

--4

--8

25°C

--12

--40°C

--16

--20

85°C

--24

VCC1 = VCC2 = VBIAS = 3.3 Vdc

--28

700

760

820

880

940

1000

f, FREQUENCY (MHz)

Figure 16. S22 versus Frequency versus

Temperature

RF Device Data

Freescale Semiconductor, Inc.

MMZ09312BT1

9

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