SPW47N60CFD(2005) 데이터 시트보기 (PDF) - Infineon Technologies
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SPW47N60CFD Datasheet PDF : 12 Pages
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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
SPW47N60CFD
600 V
0.083 Ω
46 A
PG-TO247
Type
SPW47N60CFD
Package
PG-TO247
Ordering Code Marking
Q67045A5051 47N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
I D,pulse
E AS
E AR
I AR
T C=25 °C
T C=100 °C
T C=25 °C
I D=10 A, V DD=50 V
I D=20 A, V DD=50 V
Drain source voltage slope
dv /dt
I D=46 A, V DS=480 V,
T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I S=46 A, V DS=480 V,
T j=125 °C
Gate source voltage
V GS
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot
T C=25 °C
T j, T stg
Value
46
29
115
1800
1
20
80
40
600
±20
±30
417
-55 ... 150
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Rev. 1.2
page 1
2005-06-28
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