SPW47N60CFD(2005) 데이터 시트보기 (PDF) - Infineon Technologies

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SPW47N60CFD
(Rev.:2005)

CoolMOS™ Power Transistor

Infineon Technologies 

SPW47N60CFD

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction -

ambient

R thJC

R thJA

leaded

Soldering temperature, wave solderingT sold

1.6 mm (0.063 in.)

from case for 10 s

-

-

0.3 K/W

-

-

62

-

-

260 °C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

-

Avalanche breakdown voltage

V (BR)DS V GS=0 V, I D=46 A

-

700

-V

-

Gate threshold voltage

V GS(th) V DS=V GS, I D=2.9 mA

3

4

5

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

-

V DS=600 V, V GS=0 V,

T j=150 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=29 A,

T j=25 °C

-

Gate resistance

Transconductance

V GS=10 V, I D=29 A,

T j=150 °C

-

RG

f =1 MHz, open drain

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=29 A

-

6

- µA

5000

-

-

100 nA

0.07 0.083 Ω

0.15

-

0.62

-

30

-S

Rev. 1.2

page 2

2005-06-28

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