SPW47N60CFD(2005) 데이터 시트보기 (PDF) - Infineon Technologies

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SPW47N60CFD
(Rev.:2005)

CoolMOS™ Power Transistor

Infineon Technologies 

Parameter

Symbol Conditions

SPW47N60CFD

min.

Values

typ.

Unit

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

C iss

-

7700

- pF

C oss

V GS=0 V, V DS=25 V,

f =1 MHz

-

2200

-

C rss

-

77

-

Effective output capacitance, energy

related4)

C o(er)

Effective output capacitance, time

related5)

C o(tr)

V GS=0 V, V DS=0 V

to 480 V

-

245

-

-

453

-

Turn-on delay time

Rise time

Turn-off delay time

Fall time

t d(on)

-

30

- ns

tr

V DD=400 V,

-

30

-

V GS=10 V, I D=46 A,

t d(off)

R G=3.3 Ω

-

100

-

tf

-

15

-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q gs

-

Q gd

V DD=480 V, I D=46 A,

-

Qg

V GS=0 to 10 V

-

V plateau

-

54

- nC

130

-

248

322

7.1

-V

1) J-STD20 and JESD22

2) Pulse width t p limited by T j,max

3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.

4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 1.2

page 3

2005-06-28

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