SPW47N60CFD(2005) 데이터 시트보기 (PDF) - Infineon Technologies

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SPW47N60CFD
(Rev.:2005)

CoolMOS™ Power Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

IS

I S,pulse

V SD

t rr

Q rr

I rrm

T C=25 °C

V GS=0 V, I F=46 A,

T j=25 °C

V R=480 V, I F=I S,

di F/dt =100 A/µs

Typical Transient Thermal Characteristics

Symbol Value

Unit Symbol

typ.

R th1

R th2

R th3

R th4

R th5

0.00289

0.00399

0.0224

0.0421

0.0619

K/W

C th1

C th2

C th3

C th4

C th5

C th6

Value

typ.

0.000564

0.0034

0.0048

0.0273

0.149

4.45)

SPW47N60CFD

min.

Values

typ.

Unit

max.

-

-

46 A

-

-

115

-

1.0

1.2 V

-

210

- ns

-

2

- µC

-

18

-A

Unit

Ws/K

5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

R thCA=0 K/W.

Rev. 1.2

page 4

2005-06-28

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