2SB1197KT146R 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SB1197KT146R

Low Frequency Transistor (-32V, -0.8A)

ROHM Semiconductor 

Transistors

2SB1197K

Low Frequency Transistor (32V, 0.8A)

2SB1197K

zFeatures

1) Low VCE(sat).

VCE(sat) ͟ 0.5V

̈́IC / IB= 0.5A / 50mAͅ

2) IC = 0.8A.

3) Complements the 2SD1781K.

zStructure

Epitaxial planar type

PNP silicon transistor

zAbsolute maximum ratings (Ta=25qC)

Parameter

Symbol

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current

IC

Collector power dissipation

PC

Junction temperature

Tj

Storage temperature

Tstg

zExternal dimensions (Unit : mm)

ROHM : SMT3

EIAJ : SC-59

∗ Denotes hFE

2.9±0.2

1.9±0.2

0.95 0.95

(1)

(2)

1.1+−00..12

0.8±0.1

0~0.1

(3)

All terminals have the

same dimensions

0.4−+00..015

0.15−+00..016

∗ Abbreviated symbol: AH

Limits

Unit

−40

V

−32

V

−5

V

−0.8

A

0.2

W

150

°C

−55 to 150

°C

(1) Emitter

(2) Base

(3) Collector

zElectrical characteristics (Ta=25qC)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −40

Collector-emitter breakdown voltage BVCEO −32

Emitter-base breakdown voltage

BVEBO −5

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE 120

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

−

−

200

12

Max.

−

−

−

−0.5

−0.5

−0.5

390

−

30

Unit

V

V

V

μA

μA

V

−

MHz

pF

Conditions

IC= −50μA

IC= −1mA

IE= −50μA

VCB= −20V

VEB= −4V

IC/IB= −0.5A/ −50mA

VCE= −3V, IC= −100mA

VCE= −5V, IE=50mA, f=100MHz

VCB= −10V, IE=0A, f=1MHz

Rev.A

1/2

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