2SA0886 데이터 시트보기 (PDF) - Panasonic Corporation

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2SA0886

Silicon PNP epitaxial planar type

Panasonic Corporation 

Power Transistors

2SA0886 (2SA886)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SC1847

8.0+–00..15

φ 3.16±0.1

Unit: mm

3.2±0.2

I Features

• Output of 4 W can be obtained by a complementary pair with

2SC1847

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

I Absolute Maximum Ratings TC = 25°C

Parameter

Symbol Rating

Unit

Collector to base voltage

VCBO

−50

V

Collector to emitter voltage

VCEO

−40

V

Emitter to base voltage

VEBO

−5

V

Peak collector current

ICP

−3

A

Collector current

IC

−1.5

A

Collector power dissipation

PC

1.2 *1

W

5 *2

Junction temperature

Storage temperature

Tj

150

°C

Tstg

−55 to +150

°C

Note) *1: Without heat sink

*2: With a 100 × 100 × 2 mm A1 heat sink

0.75±0.1

0.5±0.1

4.6±0.2

2.3±0.2

123

0.5±0.1

1.76±0.1

1: Emitter

2: Collector

3: Base

TO-126B Package

I Electrical Characteristics TC = 25°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector cutoff current

Emitter cutoff current

Collector to base voltage

Collector to emitter voltage

Forward current transfer ratio *

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

ICBO

ICEO

IEBO

VCBO

VCEO

hFE

VCE(sat)

VBE(sat)

fT

Cob

VCB = −20 V, IE = 0

VCE = −10 V, IB = 0

VEB = −5 V, IC = 0

IC = −1 mA, IE = 0

−50

IC = −2 mA, IB = 0

−40

VCE = −5 V, IC = −1 A

80

IC = −1.5 A, IB = − 0.15 A

IC = −2 A, IB = − 0.2 A

VCB = −5 V, IE = 0.5 A, f = 200 MHz

VCB = −20 V, IE = 0, f = 1 MHz

−1

−100

−10

220

−1.0

−1.5

150

45

µA

µA

µA

V

V

V

V

MHz

pF

Note) *: Rank classification

Rank

Q

R

hFE

80 to 160 120 to 220

Note.) The Part number in the Parenthesis shows conventional part number.

1

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