2SA1020 데이터 시트보기 (PDF) - Daya Electric Group Co., Ltd.

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2SA1020

TO-92L Plastic-Encapsulate Transistors

Daya Electric Group Co., Ltd. 

TO-92L Plastic-Encapsulate Transistors

2SA1020 TRANSISTOR (PNP)

TO-92L

FEATURES

Power amplifier applications

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-2

A

PC

Collector Power Dissipation

900

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO IC =-100µA,IE=0

-50

Collector-emitter breakdown voltage

V(BR)CEO IC =-10mA,IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO IE=-100µA,IC=0

-5

Collector cut-off current

ICBO

VCB=-50V,IE=0

Emitter cut-off current

IEBO

VEB=-5V,IC=0

DC current gain

hFE(1) VCE=-2V,IC=-0.5A

70

hFE(2) VCE=-2V,IC=-1.5A

40

Collector-emitter saturation voltage

VCE(sat) IC=-1A,IB=-50mA

Base-emitter saturation voltage

VBE(sat) IC=-1A,IB=-50mA

Transition frequency

fT

VCE=-2V,IC=-500mA

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Turn-on time

Storage time

ton

ts

VCC=-30V,IB1=-IB2=-0.05A, IC=-1A

Fall time

tf

TYP

100

40

0.1

1

0.1

MAX

-1

-1

240

UNIT

V

V

V

µA

µA

-0.5

V

-1.2

V

MHz

pF

μs

μs

μs

CLASSIFICATION OF hFE(1)

Rank

Range

O

70-140

Y

120-240

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