2SA1217 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1217

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A

VBE

Base-emitter on voltage

IC=-0.5A ; VCE=-2V

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-2V

hFE-2

DC current gain

IC=-2.5A ; VCE=-2V

fT

Transition frequency

IC=-0.5A ; VCE=-2V

COB

Collector output capacitance

f=1MHz ; VCB=-10V;IE=0

‹ hFE-1 Classifications

O

Y

80-160

120-240

Product Specification

2SA1217

MIN TYP. MAX UNIT

-40

V

-0.8

V

-1.0

V

-0.1 μA

-0.1 μA

80

240

25

100

MHz

35

pF

2

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