2SA1618-Y(TE85L,F) 데이터 시트보기 (PDF) - Toshiba
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2SA1618-Y(TE85L,F) Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1618
Audio Frequency General Purpose Amplifier Applications
• Small package (dual type)
• High voltage and high current: VCEO = −50 V, IC = −150 mA (max)
• High hFE: hFE = 120 to 400
• Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)
= 0.95 (typ.)
• Complementary to 2SC4207
2SA1618
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
−50
V
−50
V
−5
V
−150
mA
−30
mA
PC
300
mW
(Note 1)
Tj
125
°C
Tstg
−55 to 125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Start of commercial production
1987-05
1
2014-03-01
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