2SA1680(TE6,F,M) 데이터 시트보기 (PDF) - Toshiba

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2SA1680(TE6,F,M)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

IC – VCE

−2.0

−100

−70

−50

−30

−20

−1.6

−15

−1.2

−0.8

−0.4

0

0

−10

−6

−4

IB = −2 mA

Common emitter Ta = 25°C

−1

−2

−3

−4

−5

Collector-emitter voltage VCE (V)

2SA1680

hFE – IC

1000

500

300

Ta = 100°C

100

25

−25

50

30

10

5

3 Cエomミmッoタn e接m地itter

VVCCEE==−−22VV

1

−0.001 −0.003 −0.01 −0.03 −0.1 −0.3 −1 −3

Collector current IC (A)

VCE (sat) – IC

−10

Common emitter

−5

IC/IB = 20

−3

−1

−0.5

−0.3

−0.1

−0.05

−0.03

Ta = 100°C

25

−25

−0.01

−0.001 −0.003 −0.01 −0.03 −0.1 −0.3 −1 −3

Collector current IC (A)

VBE (sat) – IC

−10

Common emitter

−5 IC/IB = 20

−3

−1

Ta = −25°C

−0.5

25

−0.3

100

−0.1

−0.05

−0.03

−0.01

−0.001 −0.003 −0.01 −0.03 −0.1 −0.3 −1 −3

Collector current IC (A)

IC – VBE

−2.0

Common emitter

VCE = −2 V

−1.6

−1.2

−0.8

Ta = 100°C

25

−25

−0.4

0

0

−0.2 −0.4 −0.6 −0.8 −1.0 −1.2

Base-emitter voltage VBE (V)

Safe Operating Area

*: Single nonrepetitive pulse Ta = 25°C

Curves must be derated linearly with increase in

temperature.

−10

−5 IC max (pulsed)*

−3 IC max (continuous)

10 ms*

1 ms*

−1

100 ms*

−0.5

−0.3 DC operation (Ta = 25°C)

−0.1

−0.05

−0.03

−0.1

−0.3

−1

−3

−10 −30

Collector-emitter voltage VCE (V)

VCEO max

−100

3

2009-12-21

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