2SB1407S 데이터 시트보기 (PDF) - TY Semiconductor

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2SB1407S

Silicon PNP Epitaxial Transistor

TY Semiconductor 

Product specification

2SB1407S

Features

Low frequency power amplifier.

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

-35

V

VCEO

-35

V

VEBO

-5

V

IC

-2.5

A

ICP

-3

A

PC

18

W

Tj

150

Tstg

-55 to +150

1 Base

2 Collector

3 Emitter

Electrical Characteristics Ta = 25

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

DC current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Symbol

Testconditons

V(BR)CBO IC = -1 mA, IE = 0

V(BR)CEO IC = -10 mA, RBE =

V(BR)EBO IE = -1 mA, IC = 0

ICBO VCB = -35 V, IE = 0

VCE = -2 V,IC = -0.5 A

hFE

VCE = -2 V,IC = -1.5 A

VBE VCE = -2 V,IC = -1.5 A

VCE(sat) IC = -2 A,IB = -0.2 A

Min Typ Max Unit

-35

V

-35

V

-5

V

-20 ìA

60

320

20

-1.5 V

-1.0 V

hFE Classification

Rank

hFE

B

60 120

C

100 200

D

160 320

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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