2SC2411R 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SC2411R

TRANSISOR(NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SC2411

TRANSISOR(NPN)

SOT-23

FEATURES

z High ICMax.ICMax. = 0.5mA

z Low VCE(sat).Optimal for low voltage operation.

z Complements the 2SA1036

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Collector-Base Voltage

40

V

Collector-Emitter Voltage

32

V

Emitter-Base Voltage

5

V

Collector Current

500

mA

Collector Power Dissipation

200

mW

Junction Temperature

150

℃

Storage Temperature

-55-150

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO IC=100μA,IE=0

40

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA,IB=0

32

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

5

Collector cut-off current

ICBO

VCB=20V,IE=0

Emitter cut-off current

IEBO

VEB=4V,IC=0

DC current gain

hFE

VCE=3V,IC=100mA

82

Collector-emitter saturation voltage

VCE(sat) IC=500mA,IB=50mA

Transition frequency

fT

VCE=5V,IC=20mA,f=100MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

TYP

250

6.0

MAX UNIT

V

V

V

1

μA

1

μA

390

0.4 V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

CP

Q

120-270

CQ

R

180-390

CR

１　

JinYu

semiconductor

www.htsemi.com

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