2SC3836 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SC3836 Datasheet PDF : 6 Pages
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2SC3836
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
60
V
50
V
15
V
300
mA
300
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V(BR)CBO
60
—
—
V
voltage
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO 50
—
—
V
voltage
IC = 1 mA, RBE = ∞
Emitter to base breakdown
V(BE)EBO
15
—
—
V
voltage
IE = 10 µA, IC = 0
Collector cutoff current
Base to emitter voltage
DC current transfer ratio
I CBO
—
—
1
µA
VCB = 50 V, IE = 0
VBE
—
—
0.75 V
VCE = 6 V, IC = 1 mA
hFE1
800 —
2000
VCE = 6 V, IC = 100 mA
(pulse test)
hFE2
500 —
Collector to emitter saturation VCE(sat) —
—
voltage
—
0.3 V
VCE = 6 V, IC = 1 mA
IC = 300 mA, IB = 30 mA
(pulse test)
2
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