2SC4604 데이터 시트보기 (PDF) - Toshiba
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2SC4604 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4604
Power Amplifier Application.
Power Switching Applications.
2SC4604
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 1.5 A)
• High-speed switching: tstg = 0.5 µs (typ.)
• Complementary to 2SA1761
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
80
V
50
V
6
V
3
A
0.6
A
900
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IE = 0
VCE = 2 V, IC = 100 mA
VCE = 2 V, IC = 2 A
IC = 1.5 A, IB = 75 mA
IC = 1.5 A, IB = 75 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
―
―
0.1
µA
―
―
0.1
µA
50
―
―
V
120 ― 400
40
―
―
―
―
0.5
V
―
―
1.2
V
― 100 ― MHz
―
20
―
pF
Turn-on time
Switching time Storage time
Fall time
ton
20 µs
Input IB1
Output
―
0.1
―
tstg
IB2
30 V
tf
IB1 = −IB2 = 75 mA, duty cycle ≤ 1%
―
0.5
―
µs
―
0.1
―
1
2004-07-26
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