2SC5816 데이터 시트보기 (PDF) - Isahaya Electronics
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2SC5816 Datasheet PDF : 5 Pages
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DEVELOPING
〈Transistor〉
2SC5814，2SC5815，2SC5816，2SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
DESCRIPTION
2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package
silicon NPN epitaxial type transistor. It is designed for low frequency
voltage amplify application.
OUTLINE DRAWING
2SC5814
2.5
0.5
1.5 0.5
Unit：ｍｍ
2SC5815
2.1
0.425 1.25 0.425
FEATURE
●Facilitates miniaturization and high-density mounting
●Excellent linearity of DC forward current gain
●Low collecter to emitter saturation voltage
VCE(sat)=0.3V max (@IC=30mA,IB=1.5mA)
APPLICATION
For hybrid IC , small type machine low frequency voltage amplify
application
①
②
③
①
②
③
JEITA：SC-59
JEDEC：similar to TO-236
Electrode connections
①：base
②：emitter
③：collecter
2SC5816
1.6
0.4
0.8 0.4
JEITA：SC-70
JEDEC：−
Electrode connections
①：base
②：emitter
③：collecter
2SC5817
1.2
0.8
MARKING
①
②
③
①
②
③
ＥＲ
TYPE NAME
ｈＦＥ ITEM
MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
JEITA：−
JEDEC：−
Electrode connections
①：base
②：emitter
③：collecter
RATINGS
2SC5814
2SC5815
2SC5816
60
6
60
125
150
125
＋125
-55〜＋125
ISAHAYA ELECTRONICS CORPORATION
JEITA：−
JEDEC：−
Electrode connections
①：base
②：emitter
③：collecter
2SC5817
100
UNIT
V
V
V
mA
mW
℃
℃
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