2SD2620J(2001) 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD2620J Datasheet PDF : 2 Pages
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Transistors
2SD2620J
Silicon NPN epitaxial planer type
For low-frequency amplification
I Features
• High forward current transfer ratio hFE
• Low collector to emitter saturation voltage VCE(sat)
• High emitter to base voltage VBEO
• SS-mini type package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
100
V
VCEO
100
V
VEBO
15
V
ICP
50
mA
IC
20
mA
PC
125
mW
Tj
125
°C
Tstg
−55 to +125
°C
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5°
Unit: mm
0.12+–00..0013
1: Base
2: Emitter
3: Collector
EIAJ: SC-81
SS-Mini Type Package
Marking Symbol: 3B
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
NV
VCB = 60 V, IE = 0
VCE = 60 V, IB = 0
IC = 10 µA, IE = 0
100
IC = 1 mA, IB = 0
100
IE = 10 µA, IC = 0
15
VCE = 10 V, IC = 2 mA
400
IC = 10 mA, IB = 1 mA
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCE = 10 V, IC = 1 mA, GB = 80 dB
Rg = 100 kΩ, Function = FLAT
Typ Max
0.1
1.0
1 200
0.05 0.2
200
80
Unit
µA
µA
V
V
V
V
MHz
mV
1
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