2SD655 데이터 시트보기 (PDF) - Renesas Electronics

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2SD655

Silicon NPN Epitaxial

Renesas Electronics 

2SD655

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

30

Collector to emitter breakdown voltage V(BR)CEO

15

Emitter to base breakdown voltage

V(BR)EBO

5

Collector cutoff current

ICBO

—

Base to emitter voltage

VBE

—

Collector to emitter saturation voltage

DC current transfer ratio

VCE(sat)

hFE*1

—

250

Gain bandwidth product

fT

—

Notes: 1. The 2SD655 is grouped by hFE as follows.

2. Pulse test

D

E

F

250 to 500 400 to 800 600 to 1200

Typ Max

—

—

—

—

—

—

—

1.0

—

1.0

0.15 0.5

— 1200

250

—

Unit

V

V

V

µA

V

V

MHz

(Ta = 25°C)

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 1 V, IC = 150 mA

IC = 500 mA, IB = 50 mA*2

VCE = 1 V, IC = 150 mA*2

VCE = 1 V, IC = 150 mA

Rev.2.00 Aug 10, 2005 page 2 of 5

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