2SD602 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SD602

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SD602

TRANSISTOR (NPN)

SOT–23

FEATURES

 Low Collector to Emitter Saturation Voltage

 Mini Type Package

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

30

VCEO Collector-Emitter Voltage

25

VEBO Emitter-Base Voltage

5

IC

Collector Current

500

PC

Collector Power Dissipation

200

RΘJA Thermal Resistance From Junction To Ambient

625

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Collector-base breakdown voltage

V(BR)CBO IC=10µA, IE=0

Collector-emitter breakdown voltage

V(BR)CEO IC=10mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO IE=10µA, IC=0

Collector cut-off current

ICBO

VCB=20V, IE=0

Emitter cut-off current

IEBO

VEB=5V, IC=0

DC current gain

hFE(1) *

hFE(2) *

VCE=10V, IC=0.15A

VCE=10V, IC=0.5A

Collector-emitter saturation voltage

VCE(sat)* IC=0.3A, IB=0.03A

Transition frequency

fT

VCE=10V,IC=0.05A, f=200MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

CLASSIFICATION OF hFE(1)

RANK

RANGE

MARKING

Q

85–170

WQ1

R

120–240

WR1

Min Typ

30

25

5

85

40

200

Max

0.1

0.1

340

0.6

15

Unit

V

V

V

µA

µA

V

MHz

pF

S

170–340

WS1

１　

JinYu

semiconductor

www.htsemi.com

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