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2SJ317NYTR-E 데이터 시트보기 (PDF) - Renesas Electronics

부품명
상세내역
제조사
2SJ317NYTR-E
Renesas
Renesas Electronics Renesas
2SJ317NYTR-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ317
Main Characteristics
Power vs. Temperature Derating
2.0
1.5
1.0
0.5
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–5
–5 V
–4
–4 V
–3 V
–2.5 V
Pulse Test
–3
–2 V
–2
–1.5 V
–1
VGS = –1 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain Current
20
10
5
Tc = –25°C
2
25°C
1
75°C
0.5
0.2
–0.1 –0.2
–0.5 –1
VDS = –5 V
Pulse Test
–2 –5 –10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–10
PW = 1 ms (1 shot)
–3
–1
–0.3
–0.1
–0.03
Operation in
this area is
limited by RDS (on)
Ta = 25°C
–0.01
–0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage VDS (V)
Typical Foward Transfer Characteristics
–5
Tc = –25°C
–4
25°C
–3
75°C
–2
–1
VDS = –5 V
Pulse Test
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
2
1
0.5
VGS = –2 V
–3 V
0.2
–4 V
0.1
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)

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