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2SJ483 데이터 시트보기 (PDF) - Renesas Electronics

부품명
상세내역
제조사
2SJ483
Renesas
Renesas Electronics Renesas
2SJ483 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ483
Main Characteristics
Power vs. Temperature Derating
1.6
1.2
0.8
0.4
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10 V –6 V
–10
Ta = 25°C
–5 V
Pulse Test
–8
–4 V
–3.5 V
–3 V
–6
–4
VGS = –2.5 V
–2
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Ta = 25°C
Pulse Test
–0.8
–0.6
–0.4
ID = –5 A
–0.2
–2 A
–1 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
–100
–30
–10
Maximum Safe Operation Area
10 µs 100 µs
–3
–1
–0.3
Operation in
–0.1
this area is
–0.03
limited by RDS (on)
Ta = 25°C
–0.01
–0.01 –0.03 –0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–10
VDS = –10 V
Pulse Test
–8
–6
–4
–2 Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25°C
Pulse Test
3
1
0.3
0.1
0.03
VGS = –4 V
–10 V
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)

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