2SJ483TZ-E 데이터 시트보기 (PDF) - Renesas Electronics
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2SJ483TZ-E Datasheet PDF : 7 Pages
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2SJ483
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
VGS = –4 V
0.2
ID = –5 A
–1 A, –2 A
0.1
–10 V
–1 A, –2 A, –5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –5 V
–10 V
ID = –5 A
–10
–25 V
–4
–20
–8
VDS
VGS
–30
–12
–40
VDD = –25 V
–10 V
–5 V
–50
0
8
16 24 32
Gate Charge Qg (nc)
–16
–20
40
Forward Transfer Admittance vs.
Drain Current
50
VDS = –10 V
Pulse Test
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
Crss
200
100 VGS = 0
f = 1 MHz
50
0
–4
–8
Coss
–12 –16 –20
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
100
td(off)
50
tf
tr
20
td(on)
10
5
–0.1 –0.2
VGS = –10 V, VDD = –10 V
duty ≤ 1 %
–0.5 –1 –2 –5 –10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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