2SK2925 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK2925

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2925(L),2SK2925(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS =0.060 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-549C (Z)

4th. Edition

Jun 1998

DPAK–2

4

4

D

G

S

12 3

12 3

1. Gate

2. Drain

3. Source

4. Drain

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