2SK2978 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK2978

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2978

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.09Ω typ. (VGS = 4 V, ID = 1.5 A)

• Low drive current

• High speed switching

• 2.5V gate drive devices.

Outline

UPAK

ADE-208-659B (Z)

3rd. Edition

Jun 1998

21

3

D

4

G

S

1. Gate

2. Drain

3. Source

4. Drain

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