2SK2978 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2978 Datasheet PDF : 8 Pages
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2SK2978
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
20
Gate to source voltage
VGSS
±10
Drain current
ID
2.5
Drain peak current
I Note1
D(pulse)
5
Body-drain diode reverse drain current IDR
2.5
Channel dissipation
Pch Note2
1
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 20
Gate to source breakdown voltage V(BR)GSS ±10
Zero gate voltege drain current IDSS
—
Gate to source leak current
I GSS
—
Gate to source cutoff voltage
VGS(off)
0.5
Static drain to source on state
resistance
RDS(on)
—
Static drain to source on state
resistance
RDS(on)
—
Forward transfer admittance
Input capacitance
|yfs|
3.0
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 3. Pulse test
4. Marking is “ZY”
Typ
—
—
—
—
—
0.09
Max
—
—
10
±10
1.5
0.12
Unit
V
V
µA
µA
V
Ω
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = 20 V, VGS = 0
VGS = ±8V, VDS = 0
ID = 1mA, VDS = 10V
ID = 1.5A, VGS = 4V Note3
0.12 0.20 Ω
ID = 1.5A, VGS = 2.5V Note3
5.0 —
S
ID = 1.5A, VDS = 10V Note3
260 —
pF
VDS = 10V
150 —
pF
VGS = 0
75
—
pF
f = 1MHz
15
—
ns
VGS = 4V, ID = 1.5A
70
—
ns
RL = 6.67Ω
55
—
ns
70
—
ns
0.9 —
V
IF = 2.5A, VGS = 0
75
—
ns
IF = 2.5A, VGS = 0
diF/ dt =50A/µs
2
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