2SK3811 데이터 시트보기 (PDF) - NEC => Renesas Technology

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2SK3811

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3811

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3811 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3811-ZP

TO-263 (MP-25ZP)

FEATURES

• Super low on-state resistance

RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A)

• High Current Rating: ID(DC) = ±110 A

(TO-263)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25°C)

Drain Current (pulse) Note1

ID(DC)

±110

A

ID(pulse)

±440

A

Total Power Dissipation (TC = 25°C)

PT1

213

W

Total Power Dissipation (TA = 25°C)

PT2

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Single Avalanche Energy Note2

Repetitive Avalanche Current Note3

Repetitive Avalanche Energy Note3

Tstg

−55 to +150

°C

EAS

518

mJ

IAR

72

A

EAR

518

mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH

3. RG = 25 Ω, Tch(peak) ≤ 150°C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16737EJ1V0DS00 (1st edition)

Date Published June 2004 NS CP(K)

Printed in Japan

2004

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