2SK3811 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SK3811 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
VGS = 10 V
2.5 Pulsed
2.0
1.5
1.0
0.5
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
1000
tr
td(off)
td(on)
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
0.1
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK3811
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
ID = 110 A
30
12
VDD = 32 V
25
20 V
10
8V
20
8
15
6
10
VGS
4
5
VDS
2
0
0
0 50 100 150 200 250 300
QG - Gate Charge - nC
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D16737EJ1V0DS
5
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