2SK4151TZ-E 데이터 시트보기 (PDF) - Renesas Electronics

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2SK4151TZ-E

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK4151

Silicon N Channel MOS FET

High Speed Power Switching

Features

 Capable of 2.5 V gate drive

 Low drive current

 Low on-resistance

RDS(on) = 1.5  typ. (at ID = 0.5 A, VGS = 4 V, Ta = 25°C)

Outline

RENESAS Package code: PRSS0003DA-A

(Package name: TO-92(1))

*

321

Absolute Maximum Ratings

3B

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Channel dissipation

Channel to ambient thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  30%

2. PW  10 s, duty cycle  1%

Symbol

VDSS

VGSS

ID Note1

ID

Note2

(pulse)

IDR Note1

IDR

Note2

(pulse)

Pch Note2

ch-a

Tch

Tstg

REJ03G1901-0100

Rev.1.00

Mar 15, 2010

'

6RXUFH

'UDLQ

*DWH

6

Ratings

150

10

1

4

1

4

0.75

166.7

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

W

C/W

C

C

REJ03G1901-0100 Rev.1.00 Mar 15, 2010

Page 1 of 6

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