2SK4151TZ-E 데이터 시트보기 (PDF) - Renesas Electronics

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2SK4151TZ-E

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK4151

Electrical Characteristics

Item

Symbol Min

Typ

Max Unit

Drain to source breakdown voltage

Gate to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

V(BR)DSS

150

—

—

V

V(BR)GSS

10

—

—

V

IGSS

—

—

10 A

IDSS

—

—

1

A

Gate to source cutoff voltage

VGS(off)

0.5

Static drain to source on state resistance RDS(on)

—

RDS(on)

—

—

1.5

V

1.5

1.95 

1.9

2.5



Input capacitance

Ciss

—

98

—

pF

Output capacitance

Coss

—

31

—

pF

Reverse transfer capacitance

Crss

—

14

—

pF

Total gate charge

Qg

—

3.5

—

nC

Gate to source charge

Qgs

—

0.5

—

nC

Gate to drain charge

Qgd

—

1.8

—

nC

Turn-on delay time

td(on)

—

8

—

ns

Rise time

tr

—

12

—

ns

Turn-off delay time

td(off)

—

34

—

ns

Fall time

tf

—

19

—

ns

Body–drain diode forward voltage

VDF

—

1.0

1.5

V

Body–drain diode reverse recovery time

trr

—

60

—

ns

Notes: 3. Pulse test

4. This device is sensitive to electrostatic discharge.

It is recommended to adopt appropriate cautions when handling this product.

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

IG = 100 A, VDS = 0

VGS = 8 V, VDS = 0

VDS = 150 V, VGS = 0

VDS = 10 V, I D = 1 mA

ID = 0.5 A, VGS = 4 V Note3

ID = 0.5 A, VGS = 2.5 V Note3

VDS = 10 V

VGS = 0

f = 1 MHz

VDD = 100 V

VGS = 4 V

ID = 1 A

VGS = 4 V

ID = 0.5 A

RL = 60 

IF = 1 A, VGS = 0 Note3

IF = 1 A, VGS = 0

diF/ dt =100 A/s

REJ03G1901-0100 Rev.1.00 Mar 15, 2010

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