2360(2007) 데이터 시트보기 (PDF) - STMicroelectronics

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2360
(Rev.:2007)

Low voltage fast-switching PNP power transistors

STMicroelectronics 

2STF2360 - 2STN2360

2 Electrical Characteristics

2 Electrical Characteristics

Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max.

ICBO

IEBO

VBE(on)

Collector Cut-off Current

(IE = 0)

Emitter Cut-off Current

(IC = 0)

Base-Emitter Voltage

VCE(sat) Collector-Emitter Saturation

Note: 1 Voltage

VBE(sat) Base-Emitter Saturation

Note: 1 Voltage

hFE DC Current Gain

Note: 1

VCB = -60V

VEB = -6V

VCE = -2V

IC = -2A _ _

IC = -3A __

IC = -2A _

IC = -100mA

IB = -100mA

IB = -150mA

IB = -100mA

IC = -100mA_ VCE = -2V

IC = -1A _ VCE = -2V

-100

-100

-630

-670

-250

-350

-730

-320

-500

-0.89 -1.2

80

160 280 400

RESISTIVE LOAD

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

fT

Transition Frequency

IC = -3A

VCC = -10V

IC = -0.1A ___ VCE =-10V

10

15

75

100

250 350

35

50

130

Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%.

Unit

nA

nA

mV

mV

mV

V

ns

ns

ns

ns

MHz

2.1 Typical Characteristics (curves)

Figure 1. DC Current Gain

Figure 2. DC Current Gain

3/9

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