DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

40TTS12 데이터 시트보기 (PDF) - International Rectifier

부품명
상세내역
제조사
40TTS12
IR
International Rectifier IR
40TTS12 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
1000
100
Tj = 25˚C
Tj = 125˚C
10
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
10
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
1 VGD
(4) (3) (2) (1)
IGD
0.1
0.001
0.01
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
1
Steady State Value
(DC Operation)
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
www.irf.com
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]