AOTF12N50 데이터 시트보기 (PDF) - Unspecified

부품명

상세내역

제조사

AOTF12N50

500V, 12A N-Channel MOSFET

Unspecified 

AOT12N50/AOB12N50/AOTF12N50

500V, 12A N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

500

600

V

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

0.54

V/ oC

IDSS

IGSS

VGS(th)

RDS(ON)

gFS

VSD

IS

ISM

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V

VDS=400V, TJ=125°C

Gate-Body leakage current

VDS=0V, VGS=±30V

Gate Threshold Voltage

VDS=5V ID=250µA

Static Drain-Source On-Resistance VGS=10V, ID=6A

Forward Transconductance

VDS=40V, ID=6A

Diode Forward Voltage

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

1

µA

10

±100 nΑ

3.3 3.9 4.5

V

0.36 0.52 Ω

16

S

0.72 1

V

12

A

48

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1089 1361 1633 pF

134 167 200 pF

10 12.6 15 pF

1.8 3.6 5.4

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=400V, ID=12A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=250V, ID=12A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V

30.7 37

nC

7.6 9

nC

13.0 16

nC

29

35

ns

69

83

ns

82

98

ns

55.5 67

ns

231 277 ns

2.82 3.4 µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=60mH, IAS=5.5A, VDD=150V, RG=25Ω, Starting TJ=25°C

2/6

www.freescale.net.cn

Free Datasheet http://www.datasheet4u.com/

Share Link: