BTS840S2 데이터 시트보기 (PDF) - Infineon Technologies
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BTS840S2 Datasheet PDF : 15 Pages
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BTS 840 S2
GND disconnect, each channel
Inductive load switch-off energy
dissipation, each channel
E bb
IN
Vbb
PROFET OUT
IN
Vbb
E AS
ELoad
Vbb VIN VST
ST
GND
VGND
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
GND disconnect with GND pull up
each channel
PROFET OUT
=
ST
GND
L
{Z L
EL
ER
RL
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
IN
Vbb
PROFET OUT
ST
GND
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Vbb
VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load, each channel
Maximum allowable load inductance for
a single switch off (one channel)4)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
ZL [mH]
100
high
IN
Vbb
PROFET OUT
ST
GND
Vbb
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
10
1
0.1
4 6 8 10 12 14 16 18 20 22 24
IL [A]
Infineon technologies
10
2003-Oct-01
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