MT48H16M16LFF-8 데이터 시트보기 (PDF) - Micron Technology

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MT48H16M16LFF-8

256Mb: x16 MOBILE SDRAM

Micron Technology 

Thus, during ambiant temperatures, the power con-

sumed during refresh was unnecessarily high, because

the refresh rate was set to accommodate the higher

temperatures. Setting M4 and M3, allow the DRAM to

accomodate more specific temperature regions during

SELF REFRESH. There are four temperature settings,

which will vary the SELF REFRESH current according to

the selected temperature. This selectable refresh rate

will save power when the DRAM is operating at normal

temperatures.

PARTIAL ARRAY SELF REFRESH

For further power savings during SELF REFRESH,

the PASR feature allows the controller to select the

amount of memory that will be refreshed during SELF

REFRESH. The refresh options are Four Bank;all four

banks, Two Bank;banks 0 and 1, One Bank;bank 0, Half

Bank; bank 0 with row address MSB 0; Quarter Bank;

bank 0 with row address 2 MSB’s 0. WRITE and READ

commands can still occur during standard operation,

but only the selected banks will be refreshed during

SELF REFRESH. Data in banks that are disabled will be

lost.

ADVANCE

256Mb: x16

MOBILE SDRAM

DEEP POWER DOWN

Deep Power Down is an operating mode to achieve

maximum power reduction by eliminating the power

of the whole memory array of the devices. Data will not

be retained once the device enters Deep Power Down

Mode.

This mode is entered by having all banks idle then

/CS and /WE held low with /RAS and /CAS held high at

the rising edge of the clock, while CKE is low. This mode

is exited by asserting CKE high.

DRIVER STRENGTH

Bit A5 of the extended mode register can be used to

select the driver strength of the DQ outputs. This value

should be set according to the applications require-

ments. Full drive strength is suitable to drive outputs

on systems in which the SDRAM component is placed

on a module. Full drive strength will drive loads up to

50pF.

The half-drive strength can be used for point-to-

point applications. Point-to-point systems are usually

lightly loaded with a memory controller accessing one

to eight SDRAM components on the memory bus with

module stubs between these devices. Driver strength

chosen should be load dependent. The lighter the load,

the less driver strength that is needed for the outputs.

256Mb: x16 Mobile SDRAM

MobileRamY26L_A.p65 – Pub. 5/02

10

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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