MT4LC16M4T8DJ-5 데이터 시트보기 (PDF) - Micron Technology
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MT4LC16M4T8DJ-5 Datasheet PDF : 20 Pages
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16 MEG x 4
FPM DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
Row-address hold time
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
Refresh period (4,096 cycles) “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
tRAH
tRAS
tRASP
tRASS
tRC
tRCD
tRCH
tRCS
tREF
tREF
tRP
tRPC
tRPS
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWP
tWRH
tWRP
MIN
8
50
50
100
90
18
0
0
30
0
90
0
13
131
73
13
2
8
40
0
8
10
10
-5
MAX
10,000
125,000
64
128
50
MIN
10
60
60
100
110
20
0
0
40
0
105
0
15
155
85
15
2
10
45
0
10
10
10
-6
MAX
10,000
125,000
64
128
50
UNITS
ns
ns
ns
µs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
23
14
16
22
4
16
18
18
4, 23
4, 23
16 Meg x 4 FPM DRAM
D21_2.p65 – Rev. 5/00
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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