CEP9060R/CEB9060R
CEF9060R
120
VGS=10,8,7V
100
80
VGS=6V
60
40
VGS=5V
20
VGS=4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
120
100
80
60
40
20
0
1
TJ=125 C
25 C
2
3
4
5
-55 C
6
7
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3600
3000
Ciss
2400
1800
1200
Coss
600
Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2
ID=62A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.2 0.6 1.0 1.4 1.8 2.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 184