D2017UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D2017UK Datasheet PDF : 2 Pages
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MECHANICAL DATA
C
A
B
!
D
( 2 p ls )
E
G
H
PIN 1
PIN 3
SOURCE
GATE
F
DP
PIN 2 DRAIN
DIM mm
A 16.51
B
6.35
C
45°
D
1.52
E
6.35
F
0.13
G
3.56
H
0.64
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5°
45°
5°
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.140 0.020
0.13 0.024 0.005
TetraFET
D2017UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
29W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
2A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3040
Issue 1
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