ESD3V3U4ULC(2010) 데이터 시트보기 (PDF) - Infineon Technologies

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ESD3V3U4ULC
(Rev.:2010)

Transient Voltage Suppressor Diodes

Infineon Technologies 

ESD3V3U4ULC

Characteristics

Table 4 RF characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Line capacitance

CL

–

0.4

0.65

pF

–

0.2

0.35

pF

Note /

Test Condition

VR = 0 V, f = 1 MHz,

I/O to GND

VR = 0V, f = 1 MHz,

I/O to I/O

Table 5 ESD characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Note /

Test Condition

Reverse clamping

voltage1) [2]

Forward clamping

voltage1) [2]

Reverse dynamic

resistance1) [2]

VCL

–

–

VFC

–

–

Rdyn, rev –

9

–

12

–

6

–

10

–

0.2

–

V

IPP = 16 A

V

IPP = 30 A

V

IPP = 16 A

V

IPP = 30 A

Ω

Forward dynamic

Rdyn, fwd –

0.25

–

Ω

resistance 1)[2]

1) Please refer to Application Note AN210. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns

to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between IPP1 = 10 A and

IPP2 = 40 A.

Preliminary Data Sheet

9

Revision 0.9, 2010-10-14

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